MTT-S Winter Technical Meeting

MTT-S Winter Technical Meeting

Saturday, 19 January 2019, 1:00pm - 3:00pm

Room: Mission AB

The annual MTT-S Winter Technical Meeting held on Saturday prior to RWW Sunday Workshops at the same venue provides a forum for MTT-S Members and others to preview the Distinguished Microwave Lectures (DML) by  the newly elected Distinguished Microwave Lecturers of Class of 2020-2022. Everyone is welcome to attend the talks at no charge.

Chair: J.-C. Chiao, Southern Methodist University

 

What is my measurement equipment actually doing? Implications for 5G, mmwave and related applications

Time: 1:00pm - 1:30pm

Speaker: Dr. Jon Martens, Anritsu

Abstract

Current microwave and high frequency instrumentation perform many tasks behind the scenes, even more so in the mm-wave and high modulation rate regimes, and it is easy to lose track of how the equipment, the processing algorithms, the setup and the signals are interacting. By exploring the measurement mechanics within some common instruments under practical conditions, it may be easier to understand where sensitivities or anomalies might increase and how to mitigate them. Through a study of example architectures and measurements, including those in the 100+ GHz range and those with wide modulation bandwidths where linearity, dynamic range and other physical metrics are stressed even more, mechanisms and ideas for better measurements will be explored.

Bio

Jon MartensJon Martens has been with Anritsu since 1995 where he is currently an Engineering Fellow. His research interests include measurement system architectures and pathologies, millimeter-wave circuit and system design, and a wide range of microwave measurement processes to include materials analysis, nonlinear and quasi-linear characterization, optical interactions and calibration.

He is the inventor or co-inventor on over 17 patents, has (co-)authored several book chapters and over 50 technical publications. Dr. Martens is a past chair of the MTT measurements technical subcommittee and is a past president of the measurements society ARFTG and is still active in both. He is a member of the technical program subcommittees for the International Microwave Symposium and ARFTG and is a former associate editor for the Transactions on Microwave Theory and Techniques.

 

Microwaving a Biological Cell Alive ‒ Broadband Label-free Noninvasive Electrical Characterization of a Live Cell

Time: 1:30pm - 2:00pm

Speaker: James C. M. Hwang, Cornell University

Abstract

Microwave is not just for cooking, smart cars, or mobile phones. We can take advantage of the wide electromagnetic spectrum to do wonderful things that are more vital to our lives. For example, microwave ablation of cancer tumor is already in wide use, and microwave remote monitoring of vital signs is becoming more important as the population ages. This talk will focus on a biomedical use of microwave at the single-cell level. At low power, microwave can readily penetrate a cell membrane to interrogate what is inside a cell, without cooking it or otherwise hurting it. It is currently the fastest, most compact, and least costly way to tell whether a cell is alive or dead. On the other hand, at higher power but lower frequency, the electromagnetic signal can interact strongly with the cell membrane to drill temporary holes of nanometer size. The nanopores allow drugs to diffuse into the cell and, based on the reaction of the cell, individualized medicine can be developed and drug development can be sped up in general. Conversely, the nanopores allow strands of DNA molecules to be pulled out of the cell without killing it, which can speed up genetic engineering. Lastly, by changing both the power and frequency of the signal, we can have either positive or negative dielectrophoresis effects, which we have used to coerce a live cell to the examination table of Dr. Microwave, then usher it out after examination. These interesting uses of microwave and the resulted fundamental knowledge about biological cells will be explored in the talk.

Bio

James HwangJames Hwang  is Professor in the Department of Materials Science and Engineering at Cornell University. He graduated from the same department with a Ph.D. degree. After years of industrial experience at IBM, Bell Labs, GE, and GAIN, he spent most of his academic career at Lehigh University. He cofounded GAIN and QED; the latter became the public company IQE. Between 2011 and 2013, he was the Program Officer for GHz-THz Electronics at the U.S. Air Force Office of Scientific Research. He has been a visiting professor at Cornell University in the US, Marche Polytechnic University in Italy, Nanyang Technological University in Singapore, National Chiao Tung University in Taiwan, Shanghai Jiao Tong University, East China Normal University, and University of Science and Technology in China. He is an IEEE Life Fellow and a Distinguished Microwave Lecturer. He has published more than 350 refereed technical papers and been granted eight U.S. patents. He has researched for decades on the design, modeling and characterization of optical, electronic, and micro-electromechanical devices and circuits. His current research interest focuses on electromagnetic sensors for individual biological cells, scanning microwave microscopy, and two-dimensional atomic-layered materials and devices.

 

Millimeter-­Wave GaN Power: The Technology to Power 5G and the Future

Time: 2:00pm - 2:30pm

Speaker: Dr. James Schellenberg, 

Abstract

The emergence of 5G cellular has created new interest in the millimeter-­wave spectrum. This frequency band (30 to 300 GHz) remains a great untapped resource that must be utilized in order to realize the goals (5G and beyond) of the Internet and cell phone industries. There simply is not enough bandwidth at lower frequencies to satisfy future system requirements for speed and capacity. The millimeter-­wave spectrum is also of great interest to military and industrial planers, where the enhanced resolution provided by greater bandwidths is necessary to meet future systems goals. Fortunately, a new device/materials technology has emerged which can meet these requirements. This is GaN on SiC substrates.MMICs fabricated with this high bandgap materials offer a factor of 10 improvement in the power density compared with older technologies such as GaAs and InP.

This talk will focus on GaN MMIC technology and how it can address industry (commercial and military) power needs at millimeter-­wave frequencies. I will first present where the technology currently is in terms of power, efficiency and frequency, and then present where it is headed. I will also present the factors limiting performance and cost and offer possible solutions.

Bio

James SchellenbergJames Schellenberg  received the B.S. degree in electrical engineering from Fresno State University, Fresno, CA in 1969, and the M.S. degree in electrical engineering from Johns Hopkins University, Baltimore, MD, in 1973.

From 1969 to 1978, he was employed by Westinghouse Electric Corporation, Advanced Technology Laboratories, in Baltimore, MD where he was responsible for bipolar and FET power amplifier/combiner design. From 1978 to 1988 he was employed by Hughes Aircraft Company, Microwave Products Division, in Torrance, CA. There he was responsible for many industry firsts in GaAs hybrid/monolithic IC technology, particularly at millimeter-wave frequencies. From 1988 to 2005 he was with Schellenberg Associates developing power MMICs for millimeter-wave applications. From 2005 to 2008 he was with Trex Enterprises in Kahului, HI developing mm-wave imaging radar. In 2008 he joined QuinStar Technology as their Chief Engineer. At QuinStar he established and led a MMIC group developing millimeter-wave power MMICs. He retired from QuinStar in 2019.

Mr. Schellenberg is the inventor of the radial-line power combiner (U.S. Patent No. 4,234,854) and the Dolph-Tchebycheff planar power combiner (U.S. patent 4,835,496) and has pioneered the development of hybrid/monolithic FET amplifiers/oscillators at millimeter-wave frequencies. He has been awarded the 1978 IR-100 Award for the FET radial line power combiner and the 1981 ISSCC Beatrice Winner Award. Having published more than 70 technical papers and authored 8 U.S. patents, he is a recognized authority of solid-state power amplifier design at microwave/millimeter-wave frequencies. His current research interests include nonlinear analysis/modeling of power amplifiers, high-power broadband amplifiers/combiners and millimeter-wave GaN power amplifiers.

 

Chip-Scale Wave-Matter Interactions at RF-to-Light Frequencies: Circuits, Systems and Applications

Time: 2:30pm - 3:00pm

Speaker: Dr. Ruonan Han, MIT

Abstract

Traditional electromagnetic (EM) spectral sensors using integrated circuit technologies (e.g. automotive radars, security imagers, cameras, etc.) are normally based on remote wave scattering or absorption by macroscopic objects at remote distance; the operations are also not selective in wave frequencies. In the past couple of years, a new paradigm of chip-scale EM spectral sensing emerges with features complementary to the above: they utilize various modalities of interactions between EM waves with high-precision frequency control and microscopic particles (molecules, atoms, etc.) with close proximity to the chip. This progress is enabled by the recent advances of silicon devices and processes, as well as the extension of circuit operation frequencies into the terahertz regime. Chip-scale sensing and metrology systems with new capabilities, higher performance and unprecedented affordability now become possible. Examples include THz gas spectroscopy sensors, on-chip “atomic-clock-grade” frequency references, room-temperature CMOS-quantum magnetometers, etc. This talk will present the basic physics of the some wave-matter interactions, key enabling technologies, as well as the designs and prototypes of a few chip systems in the category described above. We will also discuss their potential applications in bio-chemical analysis, wireless networks, PNT (positioning, navigation & timing), security and so on.

Bio

Ruonan HanRuonan Han  received the B.Sc. degree in microelectronics from Fudan University, in 2007, the M.Sc. degree in electrical engineering from the University of Florida in 2009, and the Ph.D. degree in electrical and computer engineering from Cornell University in 2014. He has been with the Department of Electrical Engineering and Computer Science, MIT, since July 2014, and is now an associate professor. His research group at MIT focuses on RF-to-photonics integrated circuits and systems for spectroscopy, metrology, imaging, quantum sensing/processing, broadband/secure communication, etc. He was the recipient of the Cornell ECE Directors Ph.D. Thesis Research Award, Cornell ECE Innovation Award, and two Best Student Paper Awards of the IEEE Radio-Frequency Integrated Circuits Symposium (2012 and 2017). He was also the recipient of the IEEE Microwave Theory and Techniques Society (MTT-S) Graduate Fellowship Award, and the IEEE Solid-State Circuits Society (SSC-S) Predoctoral Achievement Award. He is an associate editor of IEEE Transactions on Very-Large-Scale Integration System, a guest associate editor of IEEE Transactions on Microwave Theory and Techniques (2019), and also serves on the Technical Program Committee (TPC) of IEEE RFIC Symposium and the Steering Committee and TPC of IEEE International Microwave Symposium. He is the IEEE MTT-S Distinguished Microwave Lecturer (2020-­‐2022). He won the Intel Outstanding Researcher Award in 2019 and the National Science Foundation (NSF) CAREER Award in 2017.