Date & Time: Sunday, January 26, 2020, 1:30 pm – 5:30 pm

1) Recent Progress on Integrated Doherty Amplifiers

Organizers: Rocco Giofrè, University of Roma Tor Vergata, Italy and Vittorio Camarchia, Politecnico di Torino, Italy


Efficiency and linearity are key features in every communication system. In a typical transmit-receive module, the PA consumes around 70% of the total energy and, being the last stage of the transmitter, it is the main responsible for the overall system linearity. However, efficiency and linearity are contrasting features. This issue rises exponentially when dealing with applications that make use of spectrum-efficient digital modulation schemes, such as 5G systems or new high throughput satellites. Indeed, if from the one hand such modulation schemes maximize the channel data rate, on the other hand, they result in time-varying envelope signals having very large PAPR.

The ability of the Doherty architecture of operating at high efficiency at significant output power back-off has led the RF and microwave community to re-discover the Doherty concept and adapt it to the requirements of modern high frequency transmitters both for terrestrial and space applications. Moreover, its implementation on GaN technology has the potentials to offer game-changing advantage.

This workshop aims to present recent progress on integrated Doherty Amplifiers and all the aspects related to their implementation, covering state-of-the-art GaN technology, advanced experimental characterization techniques at device/circuit level, as well as various Doherty HPA MMIC implementations.


Integrated Doherty Power Amplifiers: Challenges and Solutions

Anna Piacibello, Vittorio Camarchia, Politecnico di Torino, Italy

GaN Enabling Technologies

Remy Leblanc, OMMIC Foundry, France

Load Pull Characterisation Oriented to the Design of Doherty Power Amplifiers

Roberto Quaglia, Cardiff University, UK

High Power Amplifications and Integration Challenges of Active Antennas for Satellite Communication

Václav Valenta, European Space Agency, The Netherlands

Design of MMIC Doherty Amplifier: Standard vs. Stacked Architecture

Ferdinando Costanzo, Rocco Giofrè, Paolo Colantonio, University of Roma Tor Vergata, Italy

Design of MMIC Doherty Amplifier: Multi-Doherty Approach

Anna Piacibello, Vittorio Camarchia, University of Roma Tor Vergata, Italy

Linearity Assessment Techniques for GaN MMICs PAs: Simulations & Experimental Characterization

Nuno Borges Carvalho, University of Aveiro, Portuga


2) Solid State Power Amplification for Space-Borne Systems

Organizers: Václav Valenta,  European Space Agency, The Netherlands


This workshop will review critical technologies, design challenges and recent trends in the area of space-borne solid-state high power amplification. Well established solutions for traditional RF payloads will be discussed as well as advanced techniques applied to multi-beam direct radiating antennas. Systems and solutions covering frequency bands up to mm-waves will be discussed, with particular focus on high-efficiency concepts, thermal management, which are of prime importance in space-borne systems. Advanced GaN MMIC technologies and trends will be reviewed together with the MMIC integration approaches for improved spacecraft efficiency.


Concepts and Challenges for High Power Amplification in Space

Václav Valenta, European Space Agency, The Netherlands

Millimeter-wave Solid-State Power Amplifiers for Space Based Communications and Remote Sensing

Naresh Deo, Quinstar, USA

Designing Microwave Power Amplifiers for Space Applications

Howard Hausman, RF Microwave Consulting Services, Hofstra University

GaN Technologies and Recent MMIC Results for Space Applications

Stéphane Piotrowicz, III-V Labs, France

GaN-on-Diamond MMICs for Space: A 2020 Status Report

Felix Ejeckam, Akash Systems, Inc., USA


3) Advances in SiGe BiCMOS and RF-CMOS Frontend Technologies

Organizers: Ahmet Cagri Ulusoy, Karlsruher Institut für Technologie (KIT), Germany; Vadim Issakov,  Infineon Technologies; Saeed Zeinolabedinzadeh  ASU


This workshop will review recent advances on frontend technologies in SiGe BiCMOS and RF-CMOS, especially in the context of emerging and maturing millimeter-wave applications such 5G, beyond 5G, automotive radar and industrial sensors.


Multi-Band Millimeter-Wave Frontends in SiGe BiCMOS and RF-CMOS

Cagri Ulusoy, Karlsruher Institut für Technologie (KIT),Germany

mm-Wave Transceiver for Radar Applications in Advanced SiGe BiCMOS and nano-scale CMOS Technologies

Vadim Issakov, Infineon Technologies, Germany

Devices and Circuits for mm-Wave Radar in CMOS

Krishnanshu Dandu, Texas Instruments, USA

Recent advances in high speed high bandwidth data converters at Teledyne e2v

Romain Pilard, Teledyne e2v

RF-SOI Technology for RF-CMOS Front End Modules

Venkata Vanukuru, GlobalFoundries

Millimeter Wave Power Amplifiers in Silicon: State of the Art and Future Technology Trend/em>

Hua Wang, Georgia Institute of Technology


4) Machine Learning and Dimensionality Reduction Techniques for RF Components and Systems: from Modeling to Linearization.

Organizers: Pere L. Gilabert,  Universitat Politècnica de Catalunya, Spain; Christian Fager,   Chalmers University of Technology, Sweden


This workshop aims to provide an updated overview of the use of machine learning algorithms for RF modeling at both device, circuit, and system level. At device level, artificial neural networks (ANNs) are used to characterize RF and microwave components, such as power transistors or RFIC passive components. At circuit and system level, this workshop will present some advanced solutions on ANN approaches to model and compensate for unwanted nonlinear effects in the transmitter chain. In particular, ANNs are used for power amplifier (PA) modeling, digital predistortion (DPD) linearization and IQ imbalance mitigation. In addition, feature selection and feature extraction techniques, used to reduce the number of parameters of parametric models as well as to ensure a proper well-conditioned estimation for related variables, will be discussed.


Artificial Neural Networks for Modeling Nonlinear Microwave Devices and Circuits

Qi-Jun Zhang, Carleton University

Modeling RF Power Transistors Using Artificial Neural Networks

Lei Zhang, NXP

Modeling Nonlinearities Using Neural Networks – From Transistor Modeling to Power Amplifier Linearization

Mohamed Helaoui, University of Calgary

Artificial Neural Networks Based Digital Predistortion for Signal Quality Enhancement in MIMO/Multiband Transmitters

Meenakshi Rawat, Indian Institute of Technology Roorkee and Patric Roblin, Ohio State University

Dimensionality Reduction Techniques for Digital Predistortion Linearization of High Efficient Power Amplifiers

Pere L. Gilabert, Universitat Politècnica de Catalunya


Date & Time: Wednesday, January 29, 2020, 8:00 am – 12:00 pm

ARFTG/SiRF joint workshop: Advanced Measurements for RF Silicon

Organizers: Joe Gering, and Scott Parker  Qorvo




The ABCs of RF Silicon Modeling for Measurement Engineers

Scott Parker, Qorvo

Characterization Challenges of Highly-Integrated Transceiver for Radar and Communication Applications

Vadim Issakov, University of Magdeburg

The OTA Measurements of 5G and mm-wave Building Blocks

Jon Martens, Anritsu

High-speed TLP and ESD Characterisation of Silicon ICs

Kathy Muhonen, Qorvo

How to Design Your Own on-Wafer Calibration Standards and Why You Should Do It

Andrej Rumiantsev, MPI Corporation and Marco Spirito, TU Delft